Michaelis-Menten kinetics during dry etching processes.

The chemical etching of germanium in Br2 environment at elevated temperatures is described by the Michaelis-Menten equation. The validity limit of Michaelis-Menten kinetics is subjected to the detailed analysis. The steady-state etching rate requires synergy of two different process parameters. High purity gas should be directed to the substrate on which intermediate reaction product does not accumulate. Theoretical calculations indicate that maximum etching rate is maintained when 99.89% of the germanium surface is covered by the reaction product, and 99.9999967% of the incident Br2 molecules are reflected from the substrate surface. Under these conditions, single GeBr2 molecule is formed after 30 million collisions of Br2 molecules with the germanium surface.

Statistical insights into the reaction of fluorine atoms with silicon.

The dependences of silicon etching rate on the concentration of F atoms are investigated theoretically. The nonlinear regression analysis of the experimental data indicates that the reaction of F atoms with silicon is 2nd overall order reaction. The relationship between overall reaction order and kinetic reaction order is established using the etching rate equation. It is found that kinetic reaction order monotonically decreases with the increase in concentration of F atoms due to the increased surface coverage. Surface passivation by the reaction products is not observed under the investigated experimental conditions.